Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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9A 900V N-channel Enhancement Mode Power MOSFET F9N90 TO-220F

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
Availability:
Quantity:
  • F9N90

  • WXDH

9A 900V N-channel Enhancement Mode Power MOSFET


1 Description

These are N-channel enhancement mode power field  effect transistors. It optimized stripe cell structure design  improves the EAS capability of the device.Which  accords with the RoHS standard. 


2 Features 

● Fast switching 

● Low on-state resistance 

● Low gate charge 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● LED power switch circuit

● Electronic ballast 

● Switch mode power supply

● Electronic transformer

VDSS RDS(on)(TYP)ID 
900V0.95Ω9A



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