Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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2A 600V N-channe Enhancement Mode Power MOSFET

2A 600V N-channe Enhancement Mode Power MOSFET
Availability:
Quantity:
  • 2N60/F2N60/E2N60/B2N60/D2N6

  • WXDH

2A 600V N-channe Enhancement Mode Power MOSFET


1 Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 


2 Features 

● Fast Switching 

● Low ON Resistance(Rdson≤4.5Ω) 

● Low Gate Charge(Typ:8nC) 

● Low Reverse Transfer Capacitances(Typ:3.8pF) 

● 100% Single Pulse Avalanche Energy Test 

● 100% ΔVDS Test


3 Applications

● used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.


VDSS RDS(on)(TYP)ID 
600V4.0Ω2A



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