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Trenchstop Insulae Bipolar Transistor 6A 650V DGD06F65M2 TO-252B

Trenchstop Insulae Bipolar Transistor 6A 650V Portae

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Trenchstop Insulae Bipolar Transistor 6A 650V

I Features

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi opera, alta NIVIS asperitas facilem operationem parallelam.

2 Features

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.73V @ IC = 6A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter

VCE	Vcesat,Tj=25℃	I c	Tjmax	sarcina
650V	1.73V	6A	150℃	TO-252B

Trenchstop Portae Bipolar Transistor Insulae 6A 650V

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