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40A 650V Trenchstop Insulae Bipolar Transistor DGC40H65M2 TO-247

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40A 650V Trenchstop Insulae Bipolar Transistor DGC40H65M2 TO-247

40A 650V Trenchstop Insulae Porta Bipolar Transistor

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DGC40H65M2
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40A 650V Trenchstop Insulae Bipolar Transistor

I Features

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi opera, alta NIVIS asperitas facilem operationem parallelam.

2 Features

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.9V @ IC = 40A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter

Vces	sarcina	Ic(Tj=100℃)
650V	TO-247-3L	40A

40A 650V Trenchstop Insulae Bipolar Transistor

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Jiangsu Donghai Semiconductor Co, Ltd instituta est in December MMIV, sita ad No. LXXXVIII, Zhongtong East Road, Shuofang, Xinwu dolor, Wuxi urbem, Jiangsu provinciae.15000m2 ambitum tegit.Descriptio capitis est 81.5 decies centena Yuan.Productio annua linea 500 decies centena millia de habet
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