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DGC40F65M2
WXDH
40A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Description
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.85V @ IC =40A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| VDSS | Vcesat,Tj=25℃ | ID |
| 650V | 1.85V | 40A |
40A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Description
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.85V @ IC =40A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| VDSS | Vcesat,Tj=25℃ | ID |
| 650V | 1.85V | 40A |
