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75A 650V Trenchstop Insulated Gate Bipolar Transistor DGC75F65M TO-247-3L

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

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Model:
DGC75F65M
Brand:
WXDH

75A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter

VCE	Vcesat,Tj=25℃	Ic	Tjmax	Package
650V	1.7V	75A	175℃	TO-247-3L

IGBT

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