注: 建议图片大小150px*50px 
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MUR40FU60DCT
WXDH
40A 600V Fast recovery diode
1 Description
40A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, VBR= 600V silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
Low power loss
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 600V | 1.6V | 20A |
40A 600V Fast recovery diode
1 Description
40A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, VBR= 600V silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
Low power loss
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 600V | 1.6V | 20A |
