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20A 650V Trenchstop Insulated Gate Bipolar Transistor DGC20F65M2 TO-247-3L

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

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Model:
DGC20F65M2
Brand:
WXDH

Product Description

20A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Description

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =20A and Tj =25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter

VDSS	Vcesat,Tj=25℃	ID
650V	1.8V	20A

IGBT

Product Category

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